| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bispectrum multilayer photodiode detector, and to provide a method of manufacturing the same. <P>SOLUTION: The bispectrum multilayer detector comprises an upper (18) and a lower (14) semiconductor layers of a first conductivity type separated by an intermediate layer (16) forming a barrier and absorbing first and second electromagnetic wave spectra, a second conductivity type semiconductor area (44) injected into the upper layer (18) and lower layer (14) and injected, respectively and at least partially, into the bottom of an opening (22) penetrating the upper layer (18) and the intermediate layer (16), and conductor elements (28, 30, 32, 34) connected to the semiconductor area (44). <P>COPYRIGHT: (C)2012,JPO&INPIT |
