| 摘要 |
A method for manufacturing a CMOS image sensor is provided to prevent the breakage of a microlens capping layer by removing the capping layer using lift-off processing. A substrate(201) including a pad layer(203) and a microlens(207) is prepared. A photoresist pattern is formed on the substrate to expose the pad layer. A capping layer is deposited on the resultant structure including the photoresist pattern. The pad layer is exposed by selectively etching the capping layer. The photoresist pattern is striped, and the capping layer is removed by lift-off processing. The capping layer is a low-temperature oxide layer.
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