| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an ink supplying port by anisotropic etching with a high degree of freedom in the sectional direction of a substrate by the CR fabrication method. SOLUTION: A silicon base is formed by sticking substrates of different crystal orientations, and anisotropic etching is utilized to form the ink supplying port. Etching can be carried out by an angle of 55°of (100) and an angle of 90°of (110). Therefore, the ink supplying port can be freely formed by sticking these substrates. COPYRIGHT: (C)2007,JPO&INPIT
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