Semiconductor device and method for manufacturing the same

摘要

It is made possible to reduce the contact resistance of the source and drain in an n-type MISFET. A semiconductor device includes: a source and drain regions provided in a p-type semiconductor substrate so as to separate each other, each including: a silicide layer containing a first metal element as a main component having a vacuum work function of 4.6 eV or greater; and a layer containing at least one second metal element selected from the group of scandium elements and lanthanoid, the layer containing the second metal element including a segregating layer in which the highest areal density is 1x10¹⁴ cm^-2 or higher, each region of the segregating layer with areal density of 1x10¹⁴ cm^-2 or higher having a thickness smaller than 1 nm; a gate insulating film provided a region between the source and drain regions on the semiconductor substrate; and a gate electrode provided on the gate insulating film.