| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppress the formation of a depletion layer on the surfaces of a gate electrode and a well region. SOLUTION: The semiconductor device includes an n-type well 11 which is formed on a surface of a semiconductor substrate and to which a first voltage is applied, a gate insulating film 13 formed on the n-type well 11, a p-type gate electrode 14 which is formed on the gate insulating film 13 and to which a second voltage higher than the first voltage is applied, and an element isolation layer 15a which is so formed on the n-type well 11 as to encircle the region in the n-type well 11 that is counter to the gate insulating film. A capacitance is formed between the region in the n-type well 11 encircled with the element isolation layer 15a and the p-type gate electrode 14. COPYRIGHT: (C)2008,JPO&INPIT
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