发明名称 |
STRAIN-COMPENSATED FIELD EFFECT TRANSISTOR AND ASSOCIATED METHOD OF FORMING THE TRANSISTOR |
摘要 |
Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
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申请公布号 |
US2008315264(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20070764948 |
申请日期 |
2007.06.19 |
申请人 |
ESCOBAR ALBERTO;GREENE BRIAN J;NOWAK EDWARD J |
发明人 |
ESCOBAR ALBERTO;GREENE BRIAN J.;NOWAK EDWARD J. |
分类号 |
H01L29/00;H01L21/336 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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