发明名称 |
VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME |
摘要 |
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming a cup-shaped electrode on sidewalls of an opening in an insulation layer and through the opening on an ohmic layer that is stacked on a conductive structure. An insulation filling member is formed that at least partially fills an interior of the electrode. The insulation filling member is formed within a range of temperatures that is sufficiently low to not substantially change resistance of the ohmic layer. A variable resistivity material is formed on the insulation filling member and is electrically connected to the electrode.
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申请公布号 |
US2008315174(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20070775657 |
申请日期 |
2007.07.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG SHIN-JAE;OH GYUHWAN;PARK INSUN;LIM HYUNSEOK;LIM NAK-HYUN |
分类号 |
H01L21/336;H01L47/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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