SOLUTION-PROCESSED SOLID ELECTROLYTIC LAYER DEVICE AND FABRICATION

摘要

The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer (3) located between first and second metallic layers (1, 4). The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor, to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.