发明名称 |
半導体装置 |
摘要 |
A semiconductor device includes a gate on a semiconductor substrate. One side wall of the gate may include at least one protrusion and an opposite side wall of the gate may include at least one depression. A contact is formed through an insulating layer disposed over the gate. The contact at least partially overlaps at least one of the protrusions in the gate. A metal layer is disposed on the insulating layer. The metal layer includes a first structure shifted to a first side of the gate. The first structure at least partially overlaps the contact such that the contact electrically couples the first structure to the gate through the insulating layer. |
申请公布号 |
JP5957127(B2) |
申请公布日期 |
2016.07.27 |
申请号 |
JP20150132868 |
申请日期 |
2015.07.01 |
申请人 |
アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドADVANCED MICRO DEVICES INCORPORATED |
发明人 |
アンドルー イー. カールソン |
分类号 |
H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/522;H01L27/04;H01L29/41;H01L29/417 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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