Semiconductor device structure and manufacturing method thereof

摘要

Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device including receiving a FinFET precursor including a fin structure formed between isolation regions, and a gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure; patterning the fin structure to comprise a pattern of at least one upward step rising from the isolation region; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer.

主权项

1. A method of manufacturing a semiconductor device comprising:
receiving a FinFET precursor comprising:
a fin structure formed between isolation regions; anda gate structure formed over a portion of the fin structure such that a sidewall of the fin structure is in contact with a gate spacer of the gate structure;patterning the fin structure to form a plurality of upward steps rising from the isolation region, wherein each of the plurality of upward steps comprises a top surface and a side surface connected to the top surface, and the top surfaces of the plurality of upward steps are located at different levels; forming a capping layer over the fin structure, the isolation region, and the gate structure; performing an annealing process on the FinFET precursor to form at least two dislocations along the upward step; and removing the capping layer.