发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS HAVING LOCAL BIT LINE SENSE AMPLIFICATION |
摘要 |
PURPOSE: A semiconductor integrated circuit device including a local bit line sense amplifier is provided to reduce the area of the local bit line sense amplifier by changing a channel direction of an enhanced transistor. CONSTITUTION: A main sense amplifier(130) amplifies a voltage difference of a bit line pair by sensing the voltage difference of the bit line pair. A local bit line sense amplifier(150) is electrically connected to the main sense amplifier and increases a sensing speed. A first transistor is electrically connected to a bit line bar and a channel is formed in parallel to a bit line. A second transistor is electrically connected to the bit line and a channel is formed in parallel to the bit line. A third transistor is driven in response to a signal of the bit line and is electrically connected to the first transistor. A fourth transistor is driven in response to a signal of a bit line bar. |
申请公布号 |
KR20120033882(A) |
申请公布日期 |
2012.04.09 |
申请号 |
KR20100095620 |
申请日期 |
2010.09.30 |
申请人 |
SK HYNIX INC. |
发明人 |
YU, HYOUN MI |
分类号 |
G11C7/06;G11C7/12;G11C11/21 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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