发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT APPARATUS HAVING LOCAL BIT LINE SENSE AMPLIFICATION
摘要 PURPOSE: A semiconductor integrated circuit device including a local bit line sense amplifier is provided to reduce the area of the local bit line sense amplifier by changing a channel direction of an enhanced transistor. CONSTITUTION: A main sense amplifier(130) amplifies a voltage difference of a bit line pair by sensing the voltage difference of the bit line pair. A local bit line sense amplifier(150) is electrically connected to the main sense amplifier and increases a sensing speed. A first transistor is electrically connected to a bit line bar and a channel is formed in parallel to a bit line. A second transistor is electrically connected to the bit line and a channel is formed in parallel to the bit line. A third transistor is driven in response to a signal of the bit line and is electrically connected to the first transistor. A fourth transistor is driven in response to a signal of a bit line bar.
申请公布号 KR20120033882(A) 申请公布日期 2012.04.09
申请号 KR20100095620 申请日期 2010.09.30
申请人 SK HYNIX INC. 发明人 YU, HYOUN MI
分类号 G11C7/06;G11C7/12;G11C11/21 主分类号 G11C7/06
代理机构 代理人
主权项
地址