发明名称 チャージポンプ回路
摘要 PROBLEM TO BE SOLVED: To provide a capacitative element having a small parasitic capacitance between one electrode and a semiconductor substrate, and to provide a charge pump circuit having small energy loss using the capacitative element.SOLUTION: Since a capacitative element is configured to form a conductive layer so that a lower part of one electrode can be covered by the other electrode and at least a part of the side surface of one electrode can be surrounded, the parasitic capacitance between one electrode and the semiconductor substrate can be made small. Additionally, since an electrode having small parasitic capacitance is determined as a node of a low voltage side in a charge pump circuit, reactive current is suppressed and energy loss can be made small.
申请公布号 JP6030900(B2) 申请公布日期 2016.11.24
申请号 JP20120208426 申请日期 2012.09.21
申请人 旭化成エレクトロニクス株式会社 发明人 相浦 正巳
分类号 H02M3/07;H01L21/822;H01L27/04 主分类号 H02M3/07
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