| 摘要 |
A manufacturing method of a semiconductor device according to the present invention comprises: laminating a surface protective sheet to a circuit surface side of a wafer formed with grooves which divide each circuit wherein an adhesive film is adhered on the circuit surface of the wafer; reducing the thickness of the wafer and finally dividing the wafer into individual chips by grinding a back face of the wafer; picking up individual chips together with the adhesive film; die-bonding said individual chip to predetermined position of a chip mounting substrate via said adhesive film; fixing the chip to the chip mounting substrate by heating the die-bonded chip having the adhesive film; and applying a static pressure larger than an ambient pressure by 0.05 MPa or more to a stacked body including the adhesive film one or more times, at any point between adhering the wafer to the adhesive film and fixing the chip to the chip mounting substrate. |
