Verfahren zur Herstellung einer Metall-Silicid-Schicht über einer Halbleiterstruktur,申请号DE19971028140-传众专利搜索

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发明名称	Verfahren zur Herstellung einer Metall-Silicid-Schicht über einer Halbleiterstruktur
摘要
申请公布号	DE19728140(C2)	申请公布日期	2002.07.18
申请号	DE19971028140	申请日期	1997.07.02
申请人	NATIONAL SEMICONDUCTOR CORP.(N.D.GES.D.STAATES DELAWARE), SANTA CLARA	发明人	KAO, DAH-BIN;PIERCE, JOHN
分类号	H01L21/28;H01L21/321;H01L21/768;H01L21/8234;H01L21/8238;(IPC1-7):H01L21/768;H01L21/283	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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