| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting device whose output light efficiency is high and also dicing into chips can be made with a good production yield, and its manufacturing method. <P>SOLUTION: In the group III nitride semiconductor light emitting device 190, an electrode 119 is formed on one main face of a laminated semiconductor 130 composed of a group III nitride semiconductor layer containing at least one light emitting layer. Also, a conductive substrate electrode 170 has a second metal film layer 150 formed partially and is pasted to a first metal film layer 140 formed partially on the other main face so that the first metal film layer 140 comes into contact with the second metal film layer 150. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
