发明名称 METHOD FOR FORMING PLASMA LAYER IN PLASMA CURRENT INTERRUPTER AND DEVICE FOR REALIZATION OF SAID METHOD
摘要 FIELD: physics. ^ SUBSTANCE: method includes generation of plasma outside the inter-electrode space of vacuum chamber of plasma current interrupter, generation of radial plasma layer in inter-electrode space of plasma current interrupter. Plasma is produced outside vacuum chamber, plasma flow is injected into vacuum chamber along its axis, plasma layer is formed by transforming axial speed of plasma flow to radial speed. Device for realization of method (plasma current interrupter) has inner and outer coaxial electrodes, forming a vacuum chamber, electrically connected to energy source, plasma source with a system for forming plasma layer, providing for plasma injection into inter-electrode space of plasma current interrupter. Plasma injector is positioned outside the vacuum chamber, and is connected thereto through plasma duct, directed towards inner electrode, and is positioned along axis of vacuum chamber, as a system for forming plasma layer, axial-symmetrical plasma deflector mounted in vacuum chamber is used. Plasma deflector can be made in form of a cone. Plasma deflector can be positioned at end surface of inner electrode of plasma current interrupter. Plasma deflector can be positioned in the hollow of inner electrode, in side surface of which oppositely to place for its positioning apertures for outputting plasma can be made. These apertures should be in form of slits. At axial limits of apertures zone into inter-electrode space elements, limiting dimensions of formed plasma layer, can be inserted. These elements can be made in form of disk-shaped concentric plates. ^ EFFECT: higher manufacturability, simplified construction, broader functional capabilities, higher efficiency. ^ 2 cl, 3 dwg
申请公布号 RU2257019(C1) 申请公布日期 2005.07.20
申请号 RU20030129694 申请日期 2003.10.06
申请人 发明人 KORNILOV V.G.;KORNILOV S.JU.;CHELPANOV V.I.
分类号 H05H1/00 主分类号 H05H1/00
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