| 摘要 |
This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take the form of an optical emitter, such as a VCSEL, or a detector, such as a photodiode. Next, an isolation region is formed that is configured such that the device region is surrounded by the isolation region. A superstrate is then disposed on the top surface of the device region. Finally, a micro-optical device, such as a lens, is placed on a top surface of the superstrate. |
