| 摘要 |
A semiconductor device having small leakage current and high breakdown voltage during reverse blocking, small on-state resistance and large output current at forward conduction, short reverse recovery time at shutoff, and high peak surge current value is provided. An n-type layer is made of a group-III nitride, and a p-type layer is made of a group-IV semiconductor material having a smaller band gap than the group-III nitride. The energy level at the top of the valence band of the n-type layer is lower than the energy level at the top of the valence band of the p-type layer, so that a P-N junction semiconductor device satisfying the above requirements is obtained. Further, a combined structure of P-N junction and Schottky junction by additionally providing an anode electrode to be in Schottky contact with the n-type layer also achieves the effect of decreasing voltage at the rising edge of current resulting from the Schottky junction.
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