| 发明名称 |
POST CHEMICAL-MECHANICAL PLANARIZATION (CMP) CLEANING COMPOSITION |
| 摘要 |
<p>A cleaning solution for cleaning microelectronic substrates, particularly for post-CMP or via formation cleaning. The cleaning solution comprises a quaternary ammonium hydroxide, an organic amine, a corrosion inhibitor, optionally an organic acid, and water. A preferred cleaning solution comprises tetramethylammonium hydroxide, monoethylanolamine, gallic acid ascorbic acid, and water with the alkalinity of the cleaning solution greater then 0.073 milliequivalents base per gram of solution.</p> |
| 申请公布号 |
EP1845555(A1) |
申请公布日期 |
2007.10.17 |
| 申请号 |
EP20070015166 |
申请日期 |
2002.02.06 |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
NAGHSHINEH, SHAHRIAR;BARNES, JEFF;OLDAK, EWA B. |
| 分类号 |
H01L21/321;C11D1/62;C11D3/00;C11D3/20;C11D3/28;C11D3/30;C11D7/26;C11D7/32;C11D11/00;C11D17/08;C23G1/18;C23G1/20;G03F7/42;H01L21/02;H01L21/3105;H01L21/311;H01L21/316 |
主分类号 |
H01L21/321 |
| 代理机构 |
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