MENUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is provided to suppress an enough trapped charge amount on an interface of a semiconducting oxide film using an insulating oxide layer which is made of gallium as a main metal element. CONSTITUTION: A first film which includes an oxide including a first metal element and a second metal element is formed on a substrate(101). A second layer made of the oxide as main metal elements is formed. A first layer includes oxide crystals made of the first metal element as main metal elements. A second film which includes the oxide is formed close to the first layer. The first layer and the second film are heated.