METHOD, APPARATUS AND SYSTEM FOR USING FREE-ELECTRON LASER COMPATIBLE EUV BEAM FOR SEMICONDUCTOR WAFER PROCESSING

摘要

At least one method, apparatus and system for providing an extreme ultraviolet beam for processing semiconductor wafers are disclosed. A level of the EUV beam is monitored. A determination is made as to whether the level of the EUV beam is below a predetermined level. In response to determining that the level of the EUV beam is below the predetermined level, a determination is made as to whether the output of at least one of the first or second laser devices has decreased from an initial level. The output of the at least one of the first or second laser devices is increased in response to determining that the output of at least one of the first or second laser devices has decreased from an initial level.

主权项

1. A method, comprising:
generating a first laser portion from a first free electron laser (FEL) source, wherein generating said first laser portion comprises accelerating a first electron bunch in a first superconducting accelerator configured to direct the first electron bunch in a rotational path within said superconducting accelerator and into a first undulator configured in parallel to said accelerator; generating a second laser portion from a second FEL source, wherein generating said second laser portion comprises accelerating a second electron bunch in a second superconducting accelerator configured to direct the second electron bunch in a counter-rotational path with respect to the first laser portion within said second laser portion superconducting accelerator and into a second undulator configured in parallel to said accelerator; combining said first laser portion and said second laser portion to generate an extreme ultraviolet (EUV) beam; and providing said EUV beam to a plurality of processing tools.