| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof in which the deterioration of a nitride semiconductor layer is suppressed.SOLUTION: A semiconductor device includes: a substrate 10 having a first region 10a and a second region 10b adjacent to the first region 10a, in which the thickness of the first region 10a is smaller than the thickness of the second region 10b; and a nitride semiconductor layer 30 that is provided on the first region 10a of the substrate 10.SELECTED DRAWING: Figure 1 |
