| 摘要 |
An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5). The quantum well structure consists of following elements: one single quantum well layer 31 or a layer stack (3), which consists of a plurality of quantum well layers (31) and at least one barrier layer (32), one barrier layer (32) being arranged between each pair of successive quantum wall layers (31), which barrier layer adjoins both quantum wall layers (31); an n-side terminating layer (2), which adjoins the n-conducting layer (1) and the single quantum well layer (31) or the layer stack (3); and a p-side terminating layer (4), which is arranged between the p-conducting layer (5) and the single quantum well layer (31) or the layer stack (3) and adjoins the layer stack (3) or the single quantum well layer (31). |
