| 摘要 |
[Problem] To provide: a zinc oxide-based sintered object which, when used in sputtering for producing a high-resistance transparent conductive film to be used as, for example, the buffer layer of a CIGS type solar cell, is inhibited from generating abnormal discharge (arcing);and a process for producing the sintered object. [Solution] This zinc oxide-based sintered object is characterized by containing at least one additive element selected from the group consisting of Mg, Al, Ti, Ga, In, and Sn in an amount of 0.01-1 mass% in terms of oxide amount and by containing Si element in an amount of 20-200 mass ppm. The sintered object is further characterized in that the zinc oxide in the sintered object has a crystal grain diameter of 25-100 μm and the Si element is present in the sintered object as 5-μm or smaller Si-containing crystal grains, none of the Si-containing crystal grains having precipitated at the boundaries of the zinc oxide crystal grains in the sintered object. The process for producing the sintered object is characterized in that a silicon compound which has a siloxane structure and is liquid at room temperature is used as an Si element source and that a molded object is fired at a set temperature in the range of 900-1,400°C. |
