QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOURCE/DRAINS, AND CONFORMAL REGROWTH SOURCE/DRAINS

摘要

Embodiments described include straining transistor quantum well (QW) channel regions with metal source/drains, and conformal regrowth source/drains to impart a uni-axial strain in a MOS channel region. Removed portions of a channel layer may be filled with a junction material having a lattice spacing different than that of the channel material to causes a uni-axial strain in the channel, in addition to a bi-axial strain caused in the channel layer by a top barrier layer and a bottom buffer layer of the quantum well.

主权项

1. A method comprising:
removing (1) a first portion of a top barrier layer and of a channel layer of a quantum well in a substrate to form a first junction region, and (2) a different second portion of the top barrier layer and a channel layer to form a second junction region in the substrate; and forming a thickness of a junction material in the first junction region and in the second junction region; wherein the junction material has a lattice spacing larger than a lattice spacing of a channel material of the channel layer in a third portion of the channel layer between the first and second junction regions.