| 发明名称 |
FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE |
| 摘要 |
Formation methods of a semiconductor device structure are provided. The method includes forming a gate stack over a semiconductor substrate and forming a source/drain structure adjacent to the gate stack. The method also includes forming a cap element over the source/drain structure. The cap element has a top surface and a side surface, and a width ratio of the top surface to the side surface of the cap element is in a range from about 0.125 to about 1. |
| 申请公布号 |
US2016372549(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615249609 |
申请日期 |
2016.08.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
WU Shing-Huang;CHEN Jian-Shian |
| 分类号 |
H01L29/08;H01L29/66;H01L21/3065;H01L29/04;H01L21/02 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device structure, comprising:
forming a gate stack over a semiconductor substrate; forming a source/drain structure adjacent to the gate stack; and forming a cap element over the source/drain structure, wherein the cap element has a top surface and a side surface, and a width ratio of the top surface to the side surface of the cap element is in a range from about 0.125 to about 1. |
| 地址 |
Hsinchu TW |
