发明名称 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME |
摘要 |
In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode. |
申请公布号 |
US2016372537(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201615256285 |
申请日期 |
2016.09.02 |
申请人 |
Renesas Electronics Corporation |
发明人 |
KAWASHIMA Yoshiyuki;TOBA Koichi;ISHII Yasushi;MATSUI Toshikazu;HASHIMOTO Takashi |
分类号 |
H01L49/02;H01L27/115;H01L27/06 |
主分类号 |
H01L49/02 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Tokyo JP |