发明名称 |
METHOD FOR MANUFACTURING A HIGH-RESISTIVITY SEMICONDUCTOR-ON-INSULATOR SUBSTRATE |
摘要 |
A method for manufacturing a high-resistivity semiconductor-on-insulator substrate comprising the steps of: a) forming a dielectric layer and a semiconductor layer over a high-resistivity substrate, such that the dielectric layer is arranged between the high-resistivity substrate and the semiconductor layer; b) forming a hard mask or resist over the semiconductor layer, wherein the hard mask or resist has at least one opening at a predetermined position; c) forming at least one doped region in the high-resistivity substrate by ion implantation of an impurity element through the at least one opening of the hard mask or resist, the semiconductor layer and the dielectric layer; d) removing the hard mask or resist; and e) forming a radiofrequency, RF, circuit in and/or on the semiconductor layer at least partially overlapping the at least one doped region in the high-resistivity substrate. |
申请公布号 |
US2016372484(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201615176925 |
申请日期 |
2016.06.08 |
申请人 |
Soitec |
发明人 |
Nguyen Bich-Yen;Allibert Frederic;Maleville Christophe |
分类号 |
H01L27/12;H01L21/266;H01L21/84;H01L23/66 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a high-resistivity semiconductor-on-insulator substrate comprising the steps of:
a) forming a dielectric layer and a semiconductor layer over a high-resistivity substrate, such that the dielectric layer is arranged between the high-resistivity substrate and the semiconductor layer; b) forming a hard mask or resist over the semiconductor layer, wherein the hard mask or resist has at least one opening at a predetermined position; c) forming at least one doped region in the high-resistivity substrate by ion implantation of an impurity element through the at least one opening of the hard mask or resist, the semiconductor layer and the dielectric layer; d) removing the hard mask or resist; and e) forming a radiofrequency circuit in and/or on the semiconductor layer at least partially overlapping the at least one doped region in the high-resistivity substrate. |
地址 |
Bernin FR |