发明名称 |
LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE |
摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the efficiency of a light emitting device by allowing a current to flow smoothly. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer(126). A protective layer(110) is formed on a side of the light emitting structure. A first electrode(190) is formed on an outer side surface of the protective layer. The first conductive semiconductor layer and the first electrode are electrically touched. A passivation layer is formed on a part of first conductive semiconductor layer and a part of the first electrode formed on the side of the light emitting structure. |
申请公布号 |
KR20120040427(A) |
申请公布日期 |
2012.04.27 |
申请号 |
KR20100101841 |
申请日期 |
2010.10.19 |
申请人 |
LG INNOTEK CO., LTD. |
发明人 |
JEONG, HWAN HEE;LEE, SANG YOUL;SONG, JUNE O;CHOI, KWANG KI |
分类号 |
H01L33/44 |
主分类号 |
H01L33/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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