发明名称 LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE
摘要 PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the efficiency of a light emitting device by allowing a current to flow smoothly. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer(126). A protective layer(110) is formed on a side of the light emitting structure. A first electrode(190) is formed on an outer side surface of the protective layer. The first conductive semiconductor layer and the first electrode are electrically touched. A passivation layer is formed on a part of first conductive semiconductor layer and a part of the first electrode formed on the side of the light emitting structure.
申请公布号 KR20120040427(A) 申请公布日期 2012.04.27
申请号 KR20100101841 申请日期 2010.10.19
申请人 LG INNOTEK CO., LTD. 发明人 JEONG, HWAN HEE;LEE, SANG YOUL;SONG, JUNE O;CHOI, KWANG KI
分类号 H01L33/44 主分类号 H01L33/44
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