| 发明名称 |
System and methods for manufacturing and using a mask |
| 摘要 |
A mask is disclosed for use in forming a thin-layer pattern of an organic electroluminescence element having high-precision pixels. The mask is manufactured by wet-etching a (100) silicon wafer (single crystal silicon substrate) 1 in a crystal orientation-dependent anisotropic fashion so as to form through-holes 11 having (111)-oriented walls 11a serving as apertures corresponding to a thin-layer pattern to be formed.
|
| 申请公布号 |
US2002111035(A1) |
申请公布日期 |
2002.08.15 |
| 申请号 |
US20020053907 |
申请日期 |
2002.01.24 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
ATOBE MITSURO;KAMISUKI SHINICHI;KUROSAWA RYUICHI;YOTSUYA SHINICHI |
| 分类号 |
H05B33/10;C23C14/04;C23C14/12;H01J1/62;H01J63/04;H01L21/00;H01L21/027;H01L21/033;H01L21/302;H01L21/336;H01L27/32;H01L29/78;H01L51/00;H01L51/50;H01L51/56;H05B33/00;H05B33/12;H05B33/14;(IPC1-7):H01L21/302 |
主分类号 |
H05B33/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
