| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a lower structure from being damaged by forming a storage node contact hole with a recess pattern forming process and a hole forming process. CONSTITUTION: A device isolation layer(33) is formed on a substrate(31) and defines a plurality of active areas(34). An interlayer dielectric layer(38) is formed on the substrate. A separation dielectric layer(47) is formed on the interlayer dielectric layer. A storage node contact plug(42A) is contacted with the edge of the active area by passing through the interlayer dielectric layer. A plurality of bit lines(45) are formed in the interlayer dielectric layer and separates storage node contact plugs. |
