SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to remove a part of a spacer and a mask oxide layer without damaging a silicide layer. CONSTITUTION: A dummy gate pattern is formed on a substrate(100) including an NMOS area(10) and a PMOS area(20). A spacer structure is formed on a sidewall of the gate pattern. A recess region is formed on the exposed substrate of the PMOS area exposed by the spacer structure and the gate pattern. A compression stress pattern(170) is formed in the recess area. A mask oxide layer is formed on the sidewall of the spacer structure.