| 发明名称 |
METHOD OF MANUFACTURING THIN FILM THERMISTOR |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film thermistor manufacturing method wherein cracking or delamination is restrained from occurring in the center region of a sputtering film after calcination processing. <P>SOLUTION: A composite metal oxide film of Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>or Mn<SB>3</SB>O<SB>4</SB>-Co<SB>3</SB>O<SB>4</SB>-Fe<SB>2</SB>O<SB>3</SB>is formed by sputtering under tensile stress on the center region of a silicon substrate 2 where an SiO<SB>2</SB>layer 3 has been formed, and the composite metal oxide film formed on the silicon substrate 2 is subjected to calcination processing after the substrate 2 is released from tensile stress. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
| 申请公布号 |
JP2006229023(A) |
申请公布日期 |
2006.08.31 |
| 申请号 |
JP20050041954 |
申请日期 |
2005.02.18 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
ISHIGAMI SHUNICHIRO;YAMAGUCHI KUNIO |
| 分类号 |
H01C7/02;C23C14/08;H01C7/00;H01C17/08 |
主分类号 |
H01C7/02 |
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