| 摘要 |
<p>PURPOSE: A semiconductor device including a buried gate and a manufacturing method thereof are provided to prevent the degradation of uniformity of an active region by not using a cut mask process for defining the active region. CONSTITUTION: A plurality of first trenches are formed on a substrate(31) and are extended in a first direction. A plurality of second trenches(37) are formed on the substrate and are extended in a second direction. A plurality of active regions(35A) are defined by the first trench and the second trench. A channel layer(39) connects the adjacent active regions in the first direction. A gate electrode(41) is formed in the second trench and covers the channel layer.</p> |
