发明名称 Semiconductor device
摘要 A semiconductor device includes a level shift circuit to convert an input signal having an amplitude from a first power supply potential to a second power supply potential to a signal having an amplitude from the first power supply potential to a third power supply potential, a first output portion to output voltage generated from the third power supply potential to an output terminal based on the output of the level shift circuit, the first output portion including a NMOS transistor, and a second output portion to output voltage generated from the third power supply potential to an output terminal based on the output of the level shift circuit, the second output portion including a PMOS transistor.
申请公布号 US2009009230(A1) 申请公布日期 2009.01.08
申请号 US20080155709 申请日期 2008.06.09
申请人 NEC ELECTRONICS CORPORATION 发明人 KAWAHIGASHI SHOUGO
分类号 H03L5/00 主分类号 H03L5/00
代理机构 代理人
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