Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof

摘要

A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The p-type semiconductor layer is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface. The first region is uniformly continuous with the second region. The second n-type semiconductor layer is stacked on the p-type semiconductor layer. The trench is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.

主权项

1. A semiconductor device, comprising:
a substrate; a first n-type semiconductor layer that is located above the substrate and includes a first interface and a second interface, wherein the first interface is extended along the substrate and the second interface forms an upper surface of a convex protruded from the first interface; a p-type semiconductor layer that is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface, wherein the first region is uniformly continuous with the second region; a second n-type semiconductor layer that is stacked on the p-type semiconductor layer; a trench that is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer; and an insulating film disposed on an upper surface of the second n-type semiconductor layer and a bottom surface of the trench.