Semiconductor arrangement and formation thereof

摘要

A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active region, over and connected to a second active region and over a shallow trench isolation (STI) region thereby connecting the first active region to the second active region. A metal contact is over and connected to a gate in the STI region. The metal connect is formed in a first opening and the metal contact is formed in a second opening, where the first opening and the second opening are formed concurrently using a single mask. The semiconductor arrangement formed using a single mask is less expensive to fabricate and requires fewer etching operations than a semiconductor arrangement formed using multiple masks.

主权项

1. A semiconductor arrangement comprising:
a first active region; a second active region; a shallow trench isolation (STI) region between the first active region and the second active region; a gate vertically overlapping the first active region, the STI region and the second active region; and a metal connect over the first active region, the STI region and the second active region and coupled to the first active region and the second active region, the metal connect comprising a substantially uniform composition comprising at least one of titanium, nitride or tungsten.