Method of fabricating semiconductor device

摘要

Methods of fabricating a semiconductor device include forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming unit layers on the semiconductor substrate. The unit layer is formed by forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and film-control material into the process chamber, purging the process chamber, forming a unit layer from the preliminary unit layer, and again purging the process chamber. The precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material includes a hydride of the ligand.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a deposited film on a semiconductor substrate in a process chamber by repeatedly forming a unit layer on the semiconductor substrate; wherein forming the unit layer comprises:
forming a preliminary unit layer on the semiconductor substrate by supplying a process material including a precursor material and a film-control material into the process chamber, wherein the precursor material includes a central atom and a ligand bonded to the central atom, and the film-control material comprises a hydride of the ligand of the precursor material;firstly purging the process chamber in which the semiconductor substrate having the preliminary unit layer is located;forming the unit layer from the preliminary unit layer in the firstly purged process chamber; andsecondly purging the process chamber in which the semiconductor substrate having the unit layer is located.