Electrode structures for LEDs with increased active area

摘要

An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. The semiconductor material can have a cutout formed therein and a portion of the electrode can be formed outside of the cutout and a portion of the electrode can be formed inside of the cutout. The portion of the electrode outside the cutout can be electrically isolated from the semiconductor material by the dielectric material.

主权项

1. An electrode structure for an LED, the electrode structure comprising:
a semiconductor material having a cutout formed therein; an electrically insulating porous dielectric material; a metal electrode; at least one pair of dielectric layers configured so as to define a DBR structure and disposed between a portion of the metal electrode and a portion of the dielectric material, wherein each pair of dielectric layers of the DBR structure is substantially optically transmissive, is comprised of layers of materials of different indices of refraction, and is a multiple of approximately ¼λ thick; and wherein a portion of the electrode is formed outside of the cutout and a portion of the electrode is formed inside of the cutout, wherein the portion of the electrode outside the cutout is electrically isolated from the semiconductor material by the dielectric material, and wherein the portion of the electrode inside the cutout is in electrical contact with the semiconductor material.