TENSILE STRAINED SEMICONDUCTOR PHOTON EMISSION AND DETECTION DEVICES AND INTEGRATED PHOTONICS SYSTEM

摘要

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

主权项

1. An optical system, comprising a light amplification element included within at least one group IV semiconductor material region, the group IV semiconductor material region in contact with and surrounded, in a plane, by a single tensile stressor region, the single tensile stressor region inducing biaxial tensile strain within at least a portion of the group IV semiconductor material region, wherein the portion of the group IV semiconductor material region including the light amplification element is located in an optical path defined by a waveguide, the optical path arranged so that light is optically coupled between the light amplification element and the waveguide.