ELECTRO-OPTICAL DEVICE, DRIVING METHOD OF ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

A pixel circuit includes a driving transistor, a switching transistor, and a light emitting element, and the light emitting elements are formed on a semiconductor substrate. A first substrate potential is supplied to the switching transistor, and a second substrate potential, different from the first substrate potential, is supplied to the driving transistor.

主权项

1. An electro-optical device, the electro-optical device including;
a semiconductor substrate having a first well having a first conductivity type, a second well having the first conductivity type, a third well having a second conductivity type different from the first conductivity type, and a third well having the second conductivity type; a first scan line and a second scan line that extend in a first direction; a data line extending in a second direction; a first light emitting element having a first electrode; a first driving transistor that controls a first current in accordance with a first potential of a first gate node while being electrically connected to the first electrode of the first light emitting element during a period when the first current is supplied to the first light emitting element, the first driving transistor being formed in the first well; a first switching transistor that is electrically connected between the first gate node of the first driving transistor and the data line and that has a second gate node electrically connected to the first scan line, the first switching transistor formed in the third well; a second light emitting element having a second electrode; a second driving transistor that controls a second current in accordance with a second potential of a third gate node while being electrically connected to the second electrode of the second light emitting element during a period when the second current is supplied to the second light emitting element, the second driving transistor being formed in the second well; a second switching transistor that is electrically connected between the third gate node of the second driving transistor and the data line and that has a fourth gate node electrically connected to the second scan line, the second switching transistor being formed in the fourth well, wherein the first scan line and the second scan line is disposed between the first well and the second well, and wherein the third well and the fourth well is disposed between the first well and the second well.