| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE |
| 摘要 |
A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode. |
| 申请公布号 |
US2016211281(A1) |
申请公布日期 |
2016.07.21 |
| 申请号 |
US201614990383 |
申请日期 |
2016.01.07 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD |
发明人 |
Ryu Myung-Kwan;Kim Eok-Su;Son Kyoung Seok;Choi Seung-Ha;Kim Sho-Yeon;Kim Hyun;Park Eun-Hye;Chu Byung-Hwan |
| 分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor substrate comprising:
a gate electrode; a channel layer overlapping the gate electrode; a source electrode overlapping the channel layer; a drain electrode overlapping the channel layer and the source electrode; and a spacer disposed between the source electrode and the drain electrode. |
| 地址 |
Yongin-City KR |
