METHOD OF MANUFACTURING THIN-FILM TRANSISTOR

摘要

According to one embodiment, a method of manufacturing a thin-film transistor includes forming a semiconductor layer on a gate electrode with an insulating layer 12 being interposed, forming interconnect formation layers on the semiconductor layer, forming a plurality of interconnects and electrodes by patterning the interconnect formation layers through etching, patterning the semiconductor layer in an island shape through etching after forming the electrodes, exposing a channel region of the semiconductor layer by etching a part of the electrodes on the semiconductor layer, and forming a protective layer so as to overlap the interconnects, the electrodes and the semiconductor layer having the island shape.

主权项

1. A method of manufacturing a thin-film transistor, the method comprising:
forming a semiconductor layer above a gate electrode with an insulating layer being interposed; forming an interconnect formation layer on the semiconductor layer; forming a plurality of interconnects and electrodes by patterning the interconnect formation layer through etching; patterning the semiconductor layer in an island shape through etching after forming the electrodes; exposing a channel region of the semiconductor layer by etching a part of the electrodes on the semiconductor layer; and forming a protective layer so as to overlap the interconnects, the electrodes and the semiconductor layer having the island shape.