METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a film on a substrate, the film including a first element and a second element different from the first element, by performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer that includes the first element by supplying a first gas that includes the first element to the substrate in a process vessel; and (b) forming a second layer that includes the first element and the second element by supplying a second gas that includes the second element to the substrate in the process vessel to modify the first layer, wherein pressure in the process vessel in one process of (a) and (b) is controlled to be higher than pressure in the process vessel in the one process when the film having a stoichiometric composition is formed, or pressure in the process vessel in the other process of (a) and (b) is controlled to be lower than pressure in the process vessel in the other process when the film having the stoichiometric composition is formed, so as to form the film having a composition that one of the first and second elements is excessive as compared with the other in terms of the stoichiometric composition.