| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching features into a silicon-containing etch layer.SOLUTION: The etch layer is placed in a plasma processing chamber. An etch gas is flowed into the plasma processing chamber. The etch gas is formed into etch plasma, where the etch plasma etches features in the silicon-containing layer leaving a silicon-containing residue. The flow of the etch gas into the plasma processing chamber is stopped. A dry cleaning gas is flowed into the plasma processing chamber, where the dry cleaning gas comprises NHand NF. The dry clean gas is formed into plasma. The silicon-containing residue is exposed to the dry cleaning gas plasma, and at least some or all of the silicon containing residue is formed into ammonium-containing compounds The flow of the dry cleaning gas is stopped. The ammonium compounds are sublimated from the layers.SELECTED DRAWING: Figure 1 |
