| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for parallel operation.SOLUTION: A semiconductor device comprises an n type impurity diffusion region 14 formed between a p type body region 2 and an ndrift layer 1. The n type impurity diffusion region 14 has impurity concentration higher than impurity concentration of the ndrift layer 1. When the n-type impurity diffusion region 14 exists, by projecting at least one of a gate trench 1a and an emitter trench 1b from a location where impurity concentration in the n type impurity diffusion region 14 becomes 1×10cmto a second principal surface side, a high breakdown voltage (BV) can be held.SELECTED DRAWING: Figure 88 |
