| 摘要 |
The objective of the present invention is to provide a length measuring element which has a large light receiving surface area and which is advantageous for performing high-speed modulation with a high sensitivity and a low dark current, and a solid-state image capturing device employing said length measuring element. This length measuring element is provided with: an n-type surface embedded region (25) which is disposed selectively in an upper portion of a pixel-forming layer (22) in such a way as to form a photodiode, and which extends in the upper portion of the pixel-forming layer (22) from a light receiving portion to a position in which light is shielded by a light-shielding plate (51); n-type charge accumulating regions (24b, 24d, 24c) having a higher impurity concentration than the surface embedded region (25); a plurality of transfer gate electrodes (42, 44, 43) disposed adjacent to the charge accumulating regions; and an n-type guide region (26a), one end portion of which is disposed toward the bottom of an opening portion of the light-shielding plate (51), and the other end portion of which reaches portions of the transfer gate electrodes, and which has a higher impurity concentration than the surface embedded region (25) and a lower impurity concentration than the charge accumulating regions. |
