METHOD FOR FORMING A SEMICONDUCTOR STRUCTURE CONTAINING HIGH MOBILITY SEMICONDUCTOR CHANNEL MATERIALS

摘要

A method of forming a semiconductor structure is provided. The method includes providing a substrate comprising, from bottom to top, a handle substrate, an insulator layer and a germanium-containing layer. Next, hard mask material portions having an opening that exposes a portion of the germanium-containing layer are formed on the substrate. An etch is then performed through the opening to provide an undercut region in the germanium-containing layer. A III-V compound semiconductor material is grown within the undercut region by utilizing an aspect ratio trapping growth process. Next, portions of the III-V compound semiconductor material are removed to provide III-V compound semiconductor material portions located between remaining portions of the germanium-containing layer.

主权项

1. A method of forming a semiconductor structure, said method comprising:
providing a substrate comprising, from bottom to top, a handle substrate, an insulator layer and a germanium-containing layer; forming hard mask material portions having an opening that exposes a portion of said germanium-containing layer on said substrate; etching through said opening to provide an undercut region in said germanium-containing layer, said undercut region is located between two remaining portions of said germanium-containing layer; growing a III-V compound semiconductor material within said undercut region and laterally outwards from sidewall surfaces of said two remaining portions of said germanium-containing layer; and removing portions of said III-V compound semiconductor material to provide III-V compound semiconductor material portions located between said two remaining portions of said germanium-containing layer, wherein said growing comprises an aspect ratio trapping process, and wherein defect-containing regions are formed adjacent each said sidewall surface of said two remaining portions of said germanium-containing layer, and wherein said defect-containing regions are removed by said removing said portions of said III-V compound semiconductor material.