发明名称 |
Method for Manufacturing a Semiconductor Device by Hydrogen Treatment |
摘要 |
A method of manufacturing a semiconductor device includes: forming a porous area at a surface of a semiconductor body; forming a semiconductor layer on the porous area by epitaxial growth; forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer, wherein the front surface of the semiconductor layer corresponds to a front side of the semiconductor device; introducing, after forming the semiconductor regions, hydrogen into the porous area by a thermal treatment, wherein the semiconductor layer with the semiconductor regions is separated from the semiconductor body along the porous area; and applying, after separation of the semiconductor layer, rear side processing to the semiconductor layer, wherein a rear side of the semiconductor layer corresponds to a rear side of the semiconductor device. |
申请公布号 |
US2016372336(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
US201615253418 |
申请日期 |
2016.08.31 |
申请人 |
Infineon Technologies Austria AG |
发明人 |
Schulze Hans-Joachim;Santos Rodriguez Francisco Javier;Mauder Anton;Baumgartl Johannes;Ahrens Carsten |
分类号 |
H01L21/322;H01L21/265;H01L21/02 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a porous area at a surface of a semiconductor body; forming a semiconductor layer on the porous area by epitaxial growth; forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer, wherein the front surface of the semiconductor layer corresponds to a front side of the semiconductor device; introducing, after forming the semiconductor regions, hydrogen into the porous area by a thermal treatment, wherein the semiconductor layer with the semiconductor regions is separated from the semiconductor body along the porous area; and applying, after separation of the semiconductor layer, rear side processing to the semiconductor layer, wherein a rear side of the semiconductor layer corresponds to a rear side of the semiconductor device. |
地址 |
Villach AT |