发明名称 THIN FILM TYPE ELECTRON SOURCE AND THIN FILM TYPE ELECTRON SOURCE APPLICATION EQUIPEMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To enable degradation of an insulation layer hardly generated in a thin film type electron source laminating a lower part electrode, the insulation layer and un upper electrode in that order. <P>SOLUTION: The upper electrode is made in a three-layer structure with an interface layer, an intermediate layer, and a surface layer from an insulation layer side. Sublimation enthalpy of an intermediate layer material is to be greater than that of the surface layer, and smaller than that of the interface layer. Or, the surface layer is omitted and a two-layer structure is made. By doing so, an image display device or a high-speed electron beam drawing device with a long life and high intensity can be achieved. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005050829(A) 申请公布日期 2005.02.24
申请号 JP20040335288 申请日期 2004.11.19
申请人 HITACHI LTD 发明人 SUZUKI MUTSUMI;KUSUNOKI TOSHIAKI
分类号 H01J37/305;H01J1/312;H01J29/04;H01J31/12;H01J37/073;(IPC1-7):H01J1/312 主分类号 H01J37/305
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